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Fig. 1 HRSEM micrographs showing cross section of samples (a) prior to SiGe SEG growth, (b) poor Si surface clean, (c) good Si surface clean and SiGe growth.
The cross section of samples and corrosion layers observed by SEM method are shown in Figures 2, 3, 4, 5 and 6.
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(d) Cross section of sample shown in (b).
Fig. 4 Cross section of sample no.
(d) TEM cross section of sample b and (e) EDX mapping of sample b.
Figure 6 represents analysis carried out on cross section of sample HT.50.04.
In addition, SEM and X-ray images in the cross section of sample no.
Figure 5 represents cross section of sample HT.49.04 and the layers in a SEM-BSE micrograph.
The cross section of sample E was observed at 200 kV by Tecnai G20 TEM system.
The green grains visible in the cross section of sample ASN2 are made of a copper based pigment.
(a) Morphology and (b) cross section of sample A at 75°C and (c) morphology and (d) cross section of sample B at 60°C. Figure 3 shows AFM images of the TiO2 thin films with different precursor temperatures such as 75°C (sample A) and 60°C (sample B).
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CEO of Professional Science Editing for Scientists @ prosciediting.com