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As the reverse bias is increased, the current remains very small until a critical voltage is reached, at which point the current suddenly increases.
As the reverse bias is increased, the leakage current remains very small until a critical voltage is reached, at which point the current suddenly increases.
The applied forward voltage is typically less than one volt, but the reverse critical voltage, called the breakdown voltage, can vary from less than one volt to many thousands of volts, depending on the impurity concentration of the junction and other device parameters.
The applied forward voltage is usually less than one volt, but the reverse critical voltage, called the breakdown voltage, can vary from less than one volt to many thousands of volts, depending on the impurity concentration of the junction and other device parameters.
Analytic solutions of the critical voltage are developed.
Reference [5] adopted 0.9 p.u. as the critical voltage (namely 0.1 p.u. voltage magnitude drop).
Subsequently, response surface methodology and central composite design were employed for critical voltage modeling and optimization.
How a defined stiffness ratio influences the critical voltage is discussed based on numerical calculation.
The effect of lateral and angular offsets on the critical voltage is analyzed.
During this transition, the critical voltage (VD) was an important parameter for the onset of CGDE.
The tangent vector is right eigenvector of the Jacobian corresponding to zero eigenvalue at critical (voltage collapse) point.
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