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It was copper nitride molecules, not atoms.
The group at I.B.M.'s Almaden Research Center here, led by Andreas Heinrich, has now created the smallest possible unit of magnetic storage by painstakingly arranging two rows of six iron atoms on a surface of copper nitride.
The reason for this could be the onset of copper nitride formation.
One may obtain copper nitride via substituting reactions such as CuF4 or NH4F.
Copper nitride films are deposited by 13.56 MHz r.f.
Therefore, this is a simple method for preparation of copper nitride films that are not usually formed due to low reactivity of copper (as transition metal) with nitrogen.
Similar(37)
Thin, nanocomposite films of copper doped molybdenum nitride (γ-Mo2N) were deposited by double source, reactive magnetron sputtering.
The electrical resistance of the thin copper and tantalum nitride (TaN) films on a silicon wafer, which is coated with a TaN spattering film before electroplating, is taken into account.
A thin copper-doped tantalum oxide (Cu TaOx) film was prepared by plasma oxidation of a copper-doped tantalum nitride (Cu TaN) and its resistance switching behavior was studied.
Copper-containing titanium nitride films were fabricated on commercial stainless steel using hybrid processes combining dual magnetron sputtering.
Direct-plated-copper (DPC) aluminum nitride (AlN) substrate with a high thermal conductivity can provide a good alternative to conventional aluminum oxide (Al2O3) substrate for better heat dissipation in the high-power module applications.
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