Sentence examples for controlled rectifier from inspiring English sources
Dual diodes with embedded silicon controlled rectifier (DD-SCR) for high-speed applications are presented.
Silicon controlled rectifier (SCR) is frequently used for electrostatic discharge (ESD) protection applications.
The principle is based on the synchronized switching control of harmonic vibration, which is derived from a classical electronic device called silicon controlled rectifier.
A new silicon controlled rectifier (SCR -based tranSCR -basedctransientuit for on-chip protection detectionainst system-level elecircuit transient disturbance is proposed.
We investigate a novel lateral diffused metal-oxide semiconductor (LDMOS) device embedded in silicon controlled rectifier (SCR) and resistance-capacitance circuit (LDMOS-SCR-RC).
An electrostatic discharge (ESD) protection device, so called, N-type silicon controlled rectifier with P-type MOSFET pass structure (NSCR_PPS), was analyzed for high voltage I/O applications.
The early version of the notes had such a chapter, but it covered only phase controlled rectifiers and inverters, and was too limited to be of general use.
In this paper we describe new diode-chain triggering silicon controlled rectifiers (SCR) circuits for electro static discharge (ESD) protection purpose.
This paper presents an active crowbar, constructed with silicon controlled rectifiers (SCRs), for doubly fed induction generator (DFIG -based winDFIG -basedto fulfill lowindlturbinese-torough (LVRT) requirements demanded by grid codes.
To address major concerns about the grid connected phase-controlled rectifiers, such as highly distorted grid currents, a poor input power factor, and a very slow dynamic performance, the voltage source PWM rectifiers have attracted great attentions today.
The key parameters in the optimization of the Diode Triggered Silicon-Controlled Rectifier (DTSCR) as a RF ESD protection, are the turn-on time and the trigger-voltage overshoots seen before the SCR turns on, during very fast ESD transients [1].
