Sentence examples for contribute to the interface from inspiring English sources

Exact(6)

Nevertheless, EC or PC oxidation is able to contribute to the interface stabilization by forming a polymeric film.

Calculations of both BO and charge density distribution reveal that it is the strong bonds between sulfur and Ni atoms lying within the interface that contribute to the interface embrittlement.

Arg49His is not in the FGF18 crystal structure, but is structurally equivalent to Arg49 in the FGF8b structure, which while adjacent to two interacting residues the sidechain of Arg49 does not contribute to the interface, and as such a mutation to histidine is unlikely to alter the binding to FGFR.

In both clusters, the aromatic Josephin side-chains of Y27, F28 and W87 contribute to the interface.

Based on the findings described above, we predicted that SsTroA docks to the periplasmic face of SsTroCD, and charged amino acid residues probably are likely involved in salt bridge formation and contribute to the interface.

However the restraints are adequately satisfied in an asymmetric dimer, wherein a fraction of the restraints localized to one part of the molecule contribute to the interface of one of the monomers in the asymmetric dimer, while the remaining fraction forms the interface of the other monomer.

Similar(54)

The O-p electrons are dominant around −0.9 eV (see Fig. 5b), contributing to the interface states.

An equivalent circuit model, where each parameter represents a macroscopic physical quantity contributing to the interface impedance, has been successfully fitted to experimental results.

In this article I describe some of the history on which it draws, emphasizing those who contributed to the interface during the twentieth century and especially the precursors to CSSS at the University of Washington.

We demonstrate that the substrate support influences graphene/tip contact conductance through substrate's elasticity, which determines contact size, as well as through variability of interatomic distances in the contact, which contributes to the interface resistivity.

Besides, it was thought that this 5-nm AlGaAs layer grown at low temperature could weaken the effect of strain relaxation and In desorption and segregation when increasing the temperature, and all of these might have contributed to the interface smoothness and InGaAs QW uniformity which both resulted in a narrower FWHM.

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