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All materials contain dislocations.
First, after deformation, only some grains contain dislocations, many of which are attached to the particles.
It has been reported that large grains in UFG materials contain dislocations while grains smaller than a certain size are dislocation free (Valiev et al. 2000; Zhu et al. 2003).
In this paper, the data related to the creation of multilayer structures, superlattices not only with pseudomorphic GeSiSn layers but also with GeSiSn nanoislands, are first demonstrated, and they do not contain dislocations and allow varying the bandgap width of the material in a wide range and cover the infrared wavelength range previously unavailable for GeSi.
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We find that three parameters influence cell efficiency: the area fraction of the cell containing dislocations, the dislocation density within defect clusters, and the concentration of recombination centers at these dislocations.
Because of this, the S-K growth mode is typically synonymous with the growth of a wetting layer followed by the nucleation of elastically strained islands, rather than islands containing dislocations [29].
The idea behind this approach becomes evident as soon as we proceed to perform averages over volumes containing dislocations of many orientations, or over ensembles where in different realizations the same spatial point may be occupied by dislocations of different orientations.
Small angle neutron scattering (SANS) measurements on Pd samples containing dislocations with a density of a few 1011 cm−2 reveal an additional intensity for a scattering vector of 0.02 Å−1 to 0.2 Å−1 after loading with hydrogen (H) or deuterium (D).
Models have been developed for the combined effect of texture and microstructure on the flow stress anisotropy of metals containing dislocation boundaries with a macroscopic orientation with respect to the sample axes.
Volume-smeared nodes contain interfacial dislocations lying in the Cu Ni interface but volume-condensed nodes contain two sets of interfacial dislocations in the two adjacent interfaces and jogs across the atomic layer between the two adjacent interfaces.
The S3/2, S5/4, S7/6 and S7/7 steps contain misfit dislocations but no stacking faults.
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