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The back electrical contact layer has no such diametrically opposed restrictions.
transparent contact layer.
Finally, Ag back contact layer was coated by thermal evaporation.
(3) Deposition of a Cu diffusion barrier and contact layer.
Finally, a p+-doped GaAs contact layer completes the structure.
So, the diffusion velocity of contact layer decreases with decreasing channel width.
Besides, the startup time of central layer is much earlier than that of the contact layer.
The bottom TiN/Ti interlayer acts as a translucent contact layer.
Finally, a 200-nm-thick p+-Si top contact layer (5×1018 cm −3) was deposited.
Figure 3b also shows the voltage dependence of PL intensity from GaAs contact layer emission.
Then, 500 nm Si-GaAs top contact layer was grown to finish the structure.
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