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It was found that shrinking the drain pillar size would significantly help in reaching cut-off at much lower gate bias even at high carrier concentration of unintentionally doped GaN and considerable leakage current caused by the Schottky barrier lowering.
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Two-dimensional simulation of the device structure shows that considerable part of the gate leakage current flows through the GaN buffer layer.
Cells with considerable leak currents were removed from the analysis.
The replacement of SiO2 with high dielectric constant (k) materials has recently attracted considerable attention because their large physical thickness can suppress a gate tunneling leakage current at a scaled equivalent oxide thickness (EOT) [1 4].
The only current that can flow from source to drain is a small leakage current.
It has high resistance, and only a small leakage current will flow across the junction.
In this condition, called reverse bias, only a very small leakage current flows.
Leakage current density-voltage.
where,, and is leakage current.
where Ilk is the leakage current.
There are five sources of leakage current, namely: capacitor leakage, printed circuit board leakage, op-amp leakage, diode leakage, and reset switch leakage.
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