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The energy eigenvalues of the confined electron states are determined by the geometry of the confinement potential (the size and shape of the island).
The quantum dot is subject to a randomly fluctuating confinement potential.
The ratio of cyclotron frequency and harmonic confinement potential has important impact on excitation rate.
It is known from optical studies that the bandgap of semiconductor QDs increases as their size decreases due to the narrowing of the quantum confinement potential.
The energy spectrum of a QD can be engineered by controlling size, shape, and strength of the confinement potential.
Resulting confinement potential stiffness profile α(f) presents a crossover from constant to linearly increasing at f ≈ 20%.
In particular, we find the conditions, under which the confinement potential possesses the Gaussian shape or is parabolic in a large region of the quantum dot.
The elemental and strain inhomogeneities associated with these three dimensional islands may result into a confinement potential for electrons and/or holes, as in a standard quantum well.
Lateral photodetectors with semiconductor quantum dots are novel devices using intrinsic properties of quantum dots such as the three dimensional confinement potential for carriers.
The confinement potential may be defined as.
Open image in new window Figure 1 Confinement potential.
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