Sentence examples for concentration etching from inspiring English sources

The important parameters which affect the etch rate and surface morphology are etchant concentration, etching temperature, ultrasonication/microwave irradiation during etching, and the addition of different kinds of additives to etchant.

The etch rate and the etched surface morphology depend on several parameters of the etchant such as concentration, etching temperature, agitation during etching, additives, etc. However the selection of the type of etching process (dry or wet) mostly depends upon the requirement of the end product.

The porosity of the nanowires is restricted by etchant concentration, etching time and doping lever of the silicon wafer.

In this work, we synthesized porous SiNWs with different parameters, including the etchant concentration, etching time and post-treatment.

In addition, the porosity and nanopore size of porous silicon can also be controlled by adjusting the etching liquid concentration, etching current, etching time, and other process parameters.

It should be highlighted that based on the Arrhenius equation, the selective etching process can be further controlled by adjusting the solution concentration, etching temperature, and time.

Regardless of the concentration of etching solution, the effective minority carrier lifetime is higher in NH4OH/H2O2/H2O post-etch-treated samples than in NaOH post-etch-treated samples.

The effect of etchant concentration on etching rate was in good agreement with previous results [12, 30].

However, the antireflection characteristics of Si nanostructures, which take into account the etchant concentration and etching temperature of MaCE, have been less explored.

The structure, growth rate, and diameter of the Si nanowires are primarily restricted by the components and concentration of etching solution, as corroborated by the following experiments.

The morphology of the as-synthesized SiNWs was highly dependent on the doping level of original silicon wafers and on the concentrations of etching solutions [32].