(9) It has been found that factor H/B (ratio between width and depth of the notch) is the most significant control factor affecting the compression strain, tensile strain, and compressive normal stresses.
Both plates were displaced toward the particle center with a constant velocity of 1 m/s (identical to compression strain rate of the bulk case) to compress the particle.
When compression temperature is higher than 1100 °C, high quality compressed samples without cracks can be obtained even engineering compression strain up to 80% for the strain rates of 1 × 10−1 to 10−3 S−10−3
When compression temperature is higher than 1100 °C, high quality compressed samples without cracks can be obtained even if engineering compression strain is up to 80% for the strain rates of 1 × 10−1 to 10−3 S−10−3
As mentioned above, a cyclic compressive load of 40 kPa was chosen, which yielded a 10% compression strain (approximately), because it maximally induced the mRNA expression of MMP1, MMP3, MMP9, MMP13 genes compared with the lower compressive loading of 0 kPa or 20 kPa in our previous study.
As a function of compression strain.
Figure 6 Representative molecular snapshots at different compression strain levels.
Fig. 4 In-plane compression strain distribution map of InGaAs SBL (right) and the compression strain distribution on the dashed line (left).
No macroscopic fracture was observed after 50% compression strain at 1273 K and 1473 K.
In these conditions, the alloys survive at least 35% of engineering compression strain without fracture.
Figure 5a,b shows the volume and surface area of the nanoparticles as a function of applied compression strain, respectively.
