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The PSBAR was designed and fabricated using standard CMOS compatible process.
Thereby the Al-MOF is industrially produced via both an economic and environmentally compatible process.
Using a fully compatible process, various Peltier devices have been fabricated.
Direct tunneling memory (DTM) with nano-scale gate oxide accomplished low-voltage operation and full compatible process with MOSFET.
In this paper, we describe a microelectronics compatible process for growing high-aspect-ratio CNT arrays with application to vertical electrical interconnects.
An integrated system comprising micro-heaters, sensors and microchannels has been realized on (1 1 0) silicon wafers, following CMOS compatible process steps.
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Also, MOS compatible processes have been used for optoelectronic circuits.
The electrical feedthroughs are processed entirely by low temperature, CMOS compatible processes.
Here, we use industrially compatible processes to fabricate large-area silicon solar cells combining interdigitated back contacts and an amorphous silicon/crystalline silicon heterojunction.
If it is intended to deposit more than one coating in the same deposition pass, they need to be compatible processes.
Further, these devices, unlike the commercial low frequency accelerometers and other similar devices reported in the past can be fabricated by surface micromachining and CMOS compatible processes.
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