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But any successes that nanotechnology has enjoyed so far have been small beer compared with the devices that would be needed to interrogate nerve cells, record the results and transmit them back to base, let alone tell those nerve cells what to do.The protagonists would, they say, build up slowly, using humbler creatures than human beings as experimental subjects to start with.
The two-phase flow and mass transfer characteristics in this device were investigated and compared with the devices with mono-sized pores.
Note that compared with the devices D, the devices E yield an enhanced short-circuit current, maybe due to a better hole-transporting and electron-blocking property of the TiOx than that of the CsOx.
Compared with the devices with wider electrodes (Fig. 3), the devices with 5-μm-wide electrodes can generate a more concentrated electric field in the gap and force the SWNTs to land on the substrate to cover a smaller area.
Compared with the devices A, the PSCs with TiOx film (devices B) yield an equipotent PCE of 4.95%, with a lower V OC of 0.76 V, a higher J SC of 10.82 mA cm−2, and a FF of 60.2%.
The results from voltage current characteristics showed that the conversion efficiency of devices with the 40% weight ratios of ZnCdTe nanocrystals is doubled compared with the devices without blending ZnCdTe nanocrystals.
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These results suggest that the charge collection efficiency of the alkali-treated device was markedly enhanced, compared with the device without alkali treatment.
The drain and transfer characteristics, electric field, transconductance and mobility of the device have been estimated and the results were compared with the device simulator results.
Simulated results show that fabrication errors result in the shift of the transmission spectrum, and lead to the increase of the crosstalk compared with the device theoretically designed.
The depth of electronic traps in the two devices was evaluated and the one with a higher crystallinity was characterized by a trap depth lower by a factor of two, when compared with the device annealed at lower temperature [67].
Compared with the device without HTM, the EQE spectrum of the device employing CIGSSe or spiro-OMeTAD HTM is significantly improved in the range of 350 800 nm, especially in the longer wavelength region.
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