Sentence examples for coefficient of voltage from inspiring English sources

(K_{text{V}}) is the coefficient of voltage feedback.

(c, d) Temperature coefficient of voltage for each branch of I-V characteristics vs. fixed current through the structure.

From real-time analysis of LCPV system open-circuit voltage found decreasing from 21 to 20.6 V with temperature coefficient of voltage ≈−0.061 V/K.

The temperature coefficient of voltage TCS (S=U) derived from the graphs depicted in Figure 7a,b (the curves in panel (b) are linearized over an interval from 20℃ to 60℃) varies from 0.3%/℃ to 0.6%/℃ for forward bias and from −3%/℃ to −2.4%/℃ for reverse bias (Figure 7c,d).

In the model, (U_{text{ref}}) is the standard reference voltage, (Tleft( s right)) is regulator of the instantaneous voltage feedback, (K_{text{PWM}}) is an equivalent gain for PWM, (K_{rm v}) is the coefficient of voltage feedback, (r) is the equivalent circuit resistance, (L) is the filter inductor, (C) is the filter capacitor, and (U_{text{o}} (s)) is the outputting voltage.

The approximate coefficients of voltage and current signals, obtained over a quarter cycle, are fed to artificial neural network to locate the faults precisely, from respective buses.

Absolute values of temperature coefficients of voltage and current are found to vary from 0.3%℃ to 0.6%/℃ for forward bias and around 2.5%/℃ for reverse bias of the diodes.

Absolute values of temperature coefficients of voltage and current have been found to vary from 0.3%/℃ to 0.6%/℃ for the forward biased structures and around 2.5%%/℃ for the reverse biased ones.

The Seebeck coefficient (amount of voltage generated per unit temperature gradient) is defined as S = Δ V / ΔT = − ℒ 12 / ( T ℒ 11 ).

Average temperature coefficient of threshold voltage (Vth) was calculated as −1.8 mV/°C, which is close to the MOS based Si power devices.

The diodes revealed unchangeable barrier heights and ideality factors as well as positive coefficients of breakdown voltage.