Temperature coefficient of resistance (TCR) and resistivity of films are crucial factors for thermal resistive sensors and concerned with microstructure.
First, heater line is modeled by using known input parameters, such as heat transfer coefficient through that air; electrical resistivity, temperature coefficient of resistance and thermal conductivity of heater material.
Electrical resistivity, temperature coefficient of resistance and thermoelectric power of both as-deposited and annealed Cu films of AVA and dc-magnetron sputtering is measured and their dependence on the film thickness is investigated.
In addition, the dependences of the room-temperature electrical resistivity and the temperature coefficient of resistance (TCR) on the Ni substitution level (x) were investigated on films annealed at 400 °C.
Fig. 2 XRD spectra of TaN films deposited on the alumina substrate with various ratios of N2/(N2 + Ar) Fig. 3 The resistivity, deposition rate, and temperature coefficient of resistance of TaN films as a function of nitrogen ratio.
Copper is a desirable material for connecting circuit elements of integrated circuits with submicron features because of their low resistivity, high thermal conductivity, and low coefficient of resistance [5, 6].
Under optimum deposition parameters, the sensing films with modulate electrical resistivity (<104 Ω cm) and high temperature coefficient of resistance (TCR) (>−3%/K) were obtained at room temperature.
Embedded thin film resistor (ETFR) with a high resistivity of 6.69 × 10− 4 Ω.cm and a low temperature coefficient of resistance of 374.78 ppm/K was obtained under the optimized deposition conditions.
temperature coefficient of resistance.
The momentum method is used to calculate the coefficient of resistance.
