Sentence examples for circuit speed from inspiring English sources

Being an architectural technique, it is largely independent of improvements in hardware technology, such as circuit speed and power reduction.

A new design methodology based on threshold voltage optimization for achieving temperature variation insensitive circuit speed is also evaluated.

It also improves the SRAM circuit speed owing to an increase of the cell read-out current.

Experimental results show that more than 70% reduction in leakage can be achieved with area penalty of ∼10% and 9 12% overhead on circuit speed and active energy.

This temporal partitioning uses an assessing trade-offs in time constraint, design size and field programmable gate arrays device parameters (circuit speed, reconfiguration time).

This paper presents a novel SRAM circuit technique for simultaneously enhancing the cell operating margin and improving the circuit speed in low-voltage operation.

For example, using copper instead of traditional aluminum wires in chips allows for higher circuit speeds with lower power consumption.

The latest miniaturization of electronic devices is approaching atomic dimensions, interconnect bottlenecks are limiting circuit speeds, new materials are being introduced into microelectronics manufactured at an unprecedented rate, and alternative technologies to mainstream CMOS are being considered.

The feature sizes of the latest generations of electronic devices are approaching atomic dimensions, interconnect bottlenecks are limiting circuit speeds, new materials are being introduced into microelectronics manufacture at an unprecedented rate, and alternative technologies to mainstream CMOS are being considered.

And while the circuits' speed probably wouldn't top that of today's chips, they could solve the problem of reading out the results of calculations performed with Josephson junctions.

Key process elements for CMOS circuits speed enhancement are reported such as process stressors, high-k metal gate (HK/MG) stack, and low resistivity ultra-shallow junctions.