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Results on the amount of charge collected, the noise and the uniformity of charge collection are given.
The results of charge collection efficiency and charge collection speed of these structures are discussed.
We have evaluated passive pixel performance, and charge collection projections.
This charge collection mode limits the CdZnTe detector performance.
The main charge collection mechanism is drift in a shallow, high field region, which leads to a fast charge collection and a high radiation tolerance.
Simulations of electrical fields and charge collection mechanisms compared to the measurements of the TCT method allow to derive predictions of the charge collection efficiency.
An alternative proof of the generalized reciprocity theorem for charge collection.
High capacitance renders efficient charge collection, transport and suppressing the recombination in the device.
We also found that the prepared structures presented a high charge collection efficiency.
The electron and hole transporting films increase charge collection efficiency and reduce recombination at interfaces.
Charge collection spectra taken under reverse voltages of more than 1 kV are discussed.
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