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We present a spectroscopic characterization of the device.
A detailed electrical characterization of the device is also reported.
The typical I-V characterization of the device is shown in Fig. 6a.
A simple semiconductor laser diode and a monochromator were used for the characterization of the device.
In this paper, we present a detailed characterization of the device done with 113 chips.
Luminol-based chemiluminescence reaction was used for the characterization of the device.
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A characterization of the device-pumping behaviour of our vacuum reactor for plasma treatment of materials at low pressure is presented.
Figure 5 Solar cell characterization of the devices with different CuInS 2 coating cycles.
The fabrication processes and the electrical characterization of the devices are described.
The characterization of the devices with low RF power and the first tests with beam are also described.
In this work, we undertake the study on the fabrication and characterization of the devices based on a single SnO2 nanobelt (NB /Y-SnO2.
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