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Generally, the same effect cannot be brought about (in practice and sometimes even in theory) by any intrinsic modification of the characteristics of the device.
(d) Retention characteristics of the device.
Figure 2 J - V characteristics of the device.
(b) Corresponding R-V hysteresis characteristics of the device [33].
Additionally, some physical characteristics of the device must be improved.
The dynamic characteristics of the device were investigated experimentally.
I-V characteristics of the device show thermally activated hopping transport.
Functions f1 and f2 are chosen accordingly to define the characteristics of the device.
The electrical characteristics of the device were measured by Agilent B1500A semiconductor device parameter analyzer.
Figure 4a, b show the output and transfer characteristics of the device.
When the irradiation is stopped, the I-V characteristics of the device can be restored completely.
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