Laboratory tests on various LED lamps are conducted and the electrical characteristics of LED lamps are tapped under different conditions.
(b) Light output power-current (L-I) and wall-plug efficiency (WPE) characteristics of LED with/without PQC structure, respectively.
The current voltage (I-V) and optical characteristics of LED chip on the PSS-ANP were measured.
By this combination, researchers are able to model the luminescence characteristics of LED chip-scaled packaging (CSP), which provides simple process steps and the freedom of the luminescence material geometrical dimension.
(a) Current voltage (I-V) characteristics of conventional LED, LED with PQC on p-GaN surface, LED with PQC on n-side roughing, and LED with PQC structure on p-GaN surface and n-side roughing, respectively.
Figure 6 The I to V characteristics of the LEDs.
Figure 4 showed the I-V characteristics of AlGaInP LEDs with SACNTs, Au-coated SACNTs, and without SACNTs, respectively.
Figure 4 I - V characteristics of AlGaInP LEDs with SACNTs, Au-coated SACNTs, and without SACNTs for comparison, respectively.
The intensity-current (L-I) characteristics of the LEDs with and without PQC structure are shown in Figure 4b.
Figure 7 Typical logarithmic I - V characteristics of GaN LEDs with and without the PSS-ANP template.
