Sentence examples for characteristics of device from inspiring English sources
Open image in new window Fig. 4 a I V characteristics of device with C H2 defect (V g = 0.4 V).
Figure 2 I-V characteristics of device with a structure of ITO/PEDOT PSS/Ag 2 S PVK/Al under different sweeping voltage ranges.
Open image in new window Fig. 6 a I V characteristics of device with b conductance plot of the device with C HOH defect (V g = 0.4 V) C HOH defect (V g = 0.4 V).
Open image in new window Fig. 5 a I V characteristics of device with b conductance plot of the device with C O defect (V g = 0.4 V) C O defect (V g = 0.4 V).
J-V characteristics of device FTO/nc-TiO2/P3HT PCBM/MoO3 (1 nm)/Ag (10 nm)/MoO3 (x nm) (x =20, 40, 60, and 80 nm) depending on the thickness oFTO/nc-TiO2/P3HT PCBM/MoO3henmilluminated from (a) the ITO side and (b) the MoO3/Ag/WO3 side.
The characteristics of device indications are linked to the precision of measurements.
We used a probe station (Keithley 4200-SCS semiconductor parametric analyser) to measure sheet resistance, and transfer and output characteristics of devices (back- and solution- gated characterizations).
The current voltage characteristics of devices, BoPET/gold/film/gold, have shown hysteresis with two current peaks in opposite direction.
In Fig. 4a, the net temperature at the semiconductor-insulator interface is plotted for four values of S, while in Fig. 4b, the effect of changing S on the output characteristics of devices with and without source plates is presented.
Scattering parameters are measured between the ports of the antennas, and the characteristics of devices with different curvature profiles are obtained.
