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Cu materials could be used as a cooling channel material of the outboard divertors.
For each channel material, the Sherwood number is also roughly correlated with the Peclet number.
InN is a promising candidate as a channel material for high-frequency field effect transistors.
Then a layer of IGZO thin film was deposited as the channel material for the n-type devices by radio frequency magnetron sputtering.
Strained-Si has also been considered as a key technology for enhancing carrier mobilities via modification of the electronic band structure of the channel material.
Especially, polydimethylsiloxane (PDMS) is the most widely used polymer as a microfluidic channel material due to many prominent features.
We present the design and expected performance of a proof-of-concept 32 channel material identification system.
All mesoporous carbon nanofiber network can act as the channel material in p-type field-effect transistor devices with field-effect mobilities over 10 cm2/V s.
InGaAs (and its variant) appears to be a promising channel material for high-performance, low-power scaled CMOS applications due to its excellent carrier transport properties.
One of the main challenges to creating a GeOI-based FET is simply to create a high-quality single-crystal layer for the channel material.
Sol-gel processed ZrO2 was used as the main active channel material for a resistive switching memory device implemented on Indium Tin oxide coated glass substrates.
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