Sentence examples for channel carrier from inspiring English sources
The channel carrier concentration can be modeled in the function of gate voltage variations as V GS 1 with PBS = V GS without PBS + V PBS (5).
The prepared SWCNT-FeFETs possess excellent properties such as large channel conductance, high on/off current ratio, high channel carrier mobility, great fatigue endurance performance, and data retention.
This waveform can be used over channels with non-contiguous spectrum fragments and exhibits very low adjacent channel interference, which is required for cognitive radio systems with multi channel carrier aggregation capabilities.
On the other hand, residue could increase the thickness of the dielectric layer, which could weaken the effective control of the channel carrier concentration by the gate electrode [19].
In order to evaluate the substrate and top bias-dependent channel carrier modulation as a function of temperature, we extracted the channel cross-section profiles containing the on- and off-current density distribution at different temperatures.
If the two logic channel carrier frequencies are set to the two peak values of the BOC signal and the incoherent cumulative results of the two are added together, the BOC signal can be captured.
Therefore, severe phonon scattering and downgraded channel mobility would happen since channel carriers would be attracted towards the dielectric interface.
First, it has a much lower dark current because the applied negative gate voltage (in our case, the threshold voltage under illumination) helps to deplete the channel carriers.
The reason why SRS has larger dominance in [110] channels than [100] ones is also understood by investigating the spatial distribution of channel carriers and the population of carriers residing near channel surfaces.
Within a simple model we show how the surface states at insulator/organic interface trap a portion of channel carriers, and result in decrease of mobility as well as source/drain current with gate voltage.
With a sound theoretical framework coupled to the spatial distribution of channel carriers, this work may present a useful guideline for understanding hole transport in ultra-narrow Si nanowires.
