Sentence examples for chamber process from inspiring English sources
Chamber process, also called Lead-chamber Process, method of producing sulfuric acid by oxidizing sulfur dioxide with moist air, using gaseous nitrogen oxides as catalysts, the reaction taking place primarily in a series of large, boxlike chambers of sheet lead.
The chamber process for its preparation on the scale required by the Leblanc process might be regarded as the most important long-term contribution of the latter.
A technique to form the trioxide, called the chamber process, developed in the early days of the operation of the Leblanc process.
Oxides of nitrogen serve as catalysts for the oxidation of sulfur dioxide in the lead chamber process for producing sulfuric acid, an instance of homogeneous catalysis in which the catalyst and reactants are gases.
Sulfuric acid prepared by firing mixtures of sulfur and nitre (sodium nitrate) was an early forerunner of the lead chamber process of sulfuric acid manufacture, in which sulfur dioxide oxidation was accelerated by the addition of oxides of nitrogen.
Therefore, the chamber process has been largely replaced by the contact process, in which the reaction takes place in a hot reactor, over a platinum or vanadium compound catalyst, a substance that increases the speed of the reaction without becoming chemically involved.
Batiza, R. & Niu, Y. Petrology and magma chamber processes at the East Pacific Rise ~ 9030'N.
This general H2O diffusivity expression can be applied to a broad range of geological conditions, including both magma chamber processes and volcanic eruption dynamics from conduit to the surface.
The lead-chamber process has been largely supplanted in modern industrial production by the contact process.
Contact process, modern industrial method of producing sulfuric acid; it has largely replaced the chamber, or lead-chamber, process.
The subsequent irradiation of these films in a single-chamber process for the dehydrogenation of the amorphous material, the modification of these coatings to polycrystalline or nanocrystalline films via ELC or to heteroepitaxial alloys on Si(100) wafers through PLIE, is also shown and evaluated.
