Sentence examples for cd vacancies from inspiring English sources
The PL spectrum is rather complex, consisting of an intense line (A0, X) at 1.6362 eV, which is ascribed to bound excitons to shallow acceptors (Cd vacancies, VCd) and its longitudinal optical (LO -phonon repLO -phonon6181 eV, an intense line (D0, X) at 1.6475 eV ascreplicao bound excitons to shatlow donors (Cd interstitial atoms, ICd).
In addition, TiC twins formed by the aggregation of C vacancies at twin boundaries.
Combined the theoretical calculations with the experimental results, it is suggested that C vacancies play a vital role in determining the magnetic properties in Fe-doped SiC nanowires.
The large anti-site concentrations observed by our experiments, however, can only be stabilized if there are C vacancies in the vicinity of the anti-site.
In order to investigate the thermodynamic driving force for the experimentally observed accumulation of C in ferritic layers of severely plastically deformed pearlitic wires, the stabilities of C interstitials in ferrite and of C vacancies in cementite are investigated as a function of uniaxial stain, using density-functional theory.
In qualitative agreement with earlier data (Petch, 1944), the decrease in the lattice parameters a and c and the simultaneous increase in b with increasing equilibration temperature T can be attributed to an increase in the fraction of C vacancies, z, in Fe3C1−z in equilibrium with the corresponding Fe[C] terminal solid-solution phase (α or γ).
Cs point defects and Cs – vacancy clusters have been investigated for stability and structure.
Equations (5), (6), (7) can be used to derive two possible values for a c-vacancy.
The potential surplus for an i worker and a c vacancy is (Wi(c) – Ui) + (Ji(c) – V(c)).
In contrast, the graphene/h-BN bilayer with the combinated defect of C-substitution in B site and C vacancy in graphene shows half-metallic electronic property.
