Argon ion etching readily removes surface oxygen, but results also in a strong preferential sputtering of nitrogen and can cause amorphization of the film surface.
The rf plasma treatment processes caused amorphization to the SiOxNy films.
The addition of PANI as a host polymer in the PAN-based gel polymer electrolytes has beneficial effects such as higher ionic conductivity, better thermal and electrochemical stabilities and enhanced ability of trapping organic solvent, possibly due to ion chelating ability of itaconate unit, though it shows less mechanical rigidity caused by amorphization of the PAN matrix.
According to Sagar et al. [23], further increase in the number of focus shots (exceeds the optimum shots) may cause partial amorphization of the deposited crystallite film, therefore, reducing the degree of crystallinity of the Mg3N2 deposited film.
The addition of nitrogen gas during deposition caused further amorphization and reduced surface roughness, until nitride phases were formed.
Although electron beam lithography has a better resolution in nanofabrication [7], high-energy beam can cause undesirable amorphization on quartz [8].
An amorphization of this layer caused by Ga+ ion irradiation during sample preparation can be excluded because of the low energy deposition of the first Pt cover layer.
However, how the phase composition and nanoscale microstructure evolute during ball milling in various materials is still controversial due to the complex mechanism of ball milling, especially in the field of solid-state amorphization caused by ball milling.
Raman studies have shown the amorphization of gallium antimonide at higher fluences.
Due to the complicated ball milling environment, how the nanoscale microstructure evolutes during the ball milling in various materials is still under discussion, and some conclusions on the final phases after ball milling are controversial, especially in the field of solid-state amorphization caused by ball milling [3, 4].
