Sentence examples for cathode magnetron from inspiring English sources

The plasma is typically generated by radio frequency inductive coupling, microwave electron cyclotron resonance, or a DC hollow cathode magnetron.

Finally, the hollow cathode magnetron source, developed especially for I-PVD, combines sputtering and ionization in a single source.

The application of a secondary discharge, inductively coupled plasma magnetron sputtering (ICP-MS) and microwave amplified magnetron sputtering, is discussed as well as the high power impulse magnetron sputtering (HIPIMS), the self-sustained sputtering (SSS) magnetron, and the hollow cathode magnetron (HCM) sputtering discharges.

The chapter describes three different approaches to ionizing sputtered metal atoms using RF inductively coupled plasma, microwave electron cyclotron resonance plasma, and hollow cathode magnetron, respectively, and focuses on the microelectronic applications of I-PVD and the properties of the deposited thin films.

In the present work we investigate if stabilization is possible by dopants like Al and Cu which are added by means of non-reactive sputtering in a dual cathode magnetron sputtering device.

AlN/TiN multilayer thin films with the layer thickness ranging from 1 nm to 50 nm were synthesized at 400 °C using a dual-cathode magnetron sputtering.

We have synthesized Ti TiB2 nanocomposite coatings by dual-cathode magnetron sputtering in argon onto polished titanium and silicon substrates with the TiB2 volume fraction varying between 6 and 45%.

A comparison of processes resulted in by combining the different magnetic arrays and power modes is made in terms of magnetic field distribution on the cathode surface, magnetron characteristics, process characteristics and deposition rates.

TiB2/TiC multilayer coatings were synthesized in a dual-cathode unbalanced magnetron sputter deposition system with substrate rotation.

Single-crystal TiN/NbN superlattices were deposited by reactive dual-cathode unbalanced magnetron sputtering in an Ar/N2 discharge onto MgO 001) substrates held at a temperature of 700°C.

A balanced dual-cathode reactive magnetron sputtering system has been developed, which allows the growth of TiN/AlN bilayers from pure titanium and aluminium targets in a mixture of argon and nitrogen gases.