Ruiz-Calaforra et al., have studied the effect of metal capping layers adjacent to NiFe layer.
However, it does not show much change for Ta and Ru capping layers.
Release is also influenced by pH, salt concentration, and number of "capping" layers.
The inhomogeneous broadening value is small for all capping layers at room temperature, and it shows the increasing trend for Cr and Cu capping layers, increasing to 66 Oe and 28 Oe respectively with T an.
Capping layers of ZrO2 or Y2O3 did not significantly improve the film stability.
The technique of material selection was also used in the search of capping layers.
In our samples, Cr capping layers did not cause a significant change in the damping constant at room temperature.
Different capping layers Ta, Cr, Cu, and Ru were deposited at an argon pressure of 3 mTorr respectively.
After annealing, a comparison of the silicon films with and without capping layers indicates that tensile stress induced by the capping layer enhances the crystallinity of the annealed amorphous silicon film.
In this photoreceiver, a high performance of GaAs metal-semiconductor-metal photodetector with InGaP buffer and capping layers was used.
Lin, F. McGuire, and A. D. Franklin, "Capping layers and thermal annealing effects of ferroelectric and antiferroelectric Hf0.5Zr0.5O2 for transistor applications," Materials Research Society MRSS) Fall Meeting, Boston, MA (2016).
