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Images for Ti/Al contacts annealed without capping layer (a) and with capping layer (b).
The ZrOx layer acted as a capping layer to NiGe.
The capping layer was removed after the high-temperature annealing.
Use as capping layer for a former ammunition disposal site.
Bilayer channel IZO TFTs consist of electron transfer channel layer and capping layer.
In our case, the AlGaAs capping layer containing As clusters was developed during the subsequent growth of the second capping layer at 580°C.
However, the pattern remained streaky, which suggests two-dimensional growth of the capping layer at 200°C. Figure 2 RHEED patterns of an AlGaAs capping layer grown.
The InAs QDs were capped immediately by a 10-nm GaAs capping layer at 500°C.
It can be used successfully as general fill or capping layer.
The Spiro-OMeTAD layer is separated by the capping layer from nanorod films.
This local strain fluctuation affects the growth of the strained layer and GaAs capping layer.
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