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As to characterize the leakage characteristic and electrical breakdown field of the film, MOS capacitor test structure was formed by thermally evaporated a 100-nm thick aluminum (Al) film, acting as a gate electrode, on top of the films.
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Conventional capacitor testing methods mostly require multiple sensors and signal parameters, which increase system cost and complexity.
Based on measurements of the transverse resistance and electrochemical capacitor tests, the fabricated composite layer of pyrolytic carbon and nanoporous alumina significantly reduced contact resistance of Al/carbon interface due to the highly conductive pyrolytic carbon formed through the nanoporous alumina on the Al surface.
All capacitors tested in this paper are realised with PICS technology.
In order to verify the flexibility of ATA capacitors, bending test was conducted with both concave and convex conditions.
This capacitor was tested in a maximum cell voltage of 1.6 V and exhibited high energy densities, calculated for the unpackaged active materials, with values of 20 W h kg−1 and power densities of 2.1 kW kg−1 with excellent cycle lifetime (90% during the first 1000 cycles) and high coulombic efficiency.
The normalized capacitance of a test capacitor is checked at 1 kHz constant frequency and voltage bias ranging from −10 to 10 V. Bipolar behaviour can be observed along with no MOS inversion layer effect.
Different types of capacitors were tested in the prototype sensing and actuation circuit and the sensing performance for different actuation signals were measured.
Their electrochemical properties in electrochemical capacitors were tested by cyclic voltammetry (CV) and galvanostatic charge/discharge methods in a three-electrode cell.
The electrochemical behavior of the capacitors was tested in 1 M H2SO4 within a potential of 0 and 1 V vs. Ag/AgCl.
Pure Sn plating on ceramic chip capacitors was tested by thermal cycling both in air and in vacuum for up to 3000 cycles and the whisker growth mechanism was clarified.
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