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On the other hand, samples with the Si3N4 InP cap layer combination also show larger energy shifts than that with SiO2 InP cap layer combination.
The impacts of Si cap layer thickness, Si1−xGex film thickness, channel doping and Ge fraction were investigated.
There exists a non-designed cap layer on the upper surface of the YBCO layer in the YBCO/LCMO heterostructure.
This is attributed to ion-irradiation induced densification which makes the cap layer an effective diffusion barrier.
Secondly, the CeO2 cap layer is fabricated.
The velocity of the cap layer is fixed, twice as large of the layer above the cap layer.
On the contrary, the Ru cap layer shows a completely inverse behavior compared to the Ag cap layer.
Tensile stresses occur at one location far away from the CeO2 cap layer.
Here, nanoholes can be filled with a QD, a thin cap layer, and a metallic nanostructure.
The AFM image shows a smooth and no-crack surface morphology of the CeO2 cap layer.
The surface roughness of the GaAs cap layer was below 1 nm.
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