By utilizing a mask-free Digital Micro-mirror Device (DMD) micro-lithography system, arbitrary micro-photopatterning in polymer films doped with BMTA can be easily obtained with UV light writing.
By utilizing an insulator mask, protein patterns with complex shapes were formed with relatively uniform thickness distribution.
By utilizing an improved MAEE of silicon in KMnO4/AgNO3/HF solution, silicon MP/NW structure was achieved under the mask of self-growing K2SiF6 particles.
The fabrication process utilizes a photoresist mask; but to overcome the instability of the photoresist during the anodization process, special borderlines are included in the mask design.
By utilizing the secret keys, MASK achieves routing and forwarding task without disclosing the identities of participating nodes.
The patterned silicon substrate was prepared by a simple wet-etching process with hydrofuric acid utilizing a hand-made physical mask.
The error-correction method employs fault masking by utilizing the self-dual concept, which is based on the fact that in the presence of a fault, the designed technique results in a fault-free complement of the expected output when fed by the complement of its input operands.
Finally to determine the number of foci within the nuclear specific region of each cell, a combined mask was created by utilizing Boolean logic.
PnP is a method to form 3D polymeric periodic structures utilizing a 3D intensity distribution of light into a photopolymer, generated by the passage of light through a phase shift mask with periodic relief patterns.
The back side of SiNx defined by RIE etching was utilized as a mask-layer for KOH wet-etching to form the Si proof mass.
The presence of copper within the bulk volume of the solder mask was characterized by utilizing scanning electron microscopy/focused ion beam and energy dispersive X-ray analysis.
