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Si (100) wafers at 650 750 °C and total pressure of 20 40 Torr by using reduced pressure chemical vapor deposition (RPCVD).
This work presents epitaxial growth of intrinsic and doped GeSnSiC layers using Ge2H6, SnCl4, CH3SiH3, B2H6, PH3 and Si2H6 deposited at 290 380 °C on strain relaxed Ge buffer layer or Si substrate by using reduced pressure chemical vapor deposition (RPCVD) technique.
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The methanol was then removed from the extract by evaporation under reduced pressure using a rota vapor (BUCHI Rotavapour R-200, Switzerland) at 40°C.
The z-factor model was developed using pseudo-reduced pressure, and pseudo-reduced temperature.
The solvents were evaporated from the yield fractions under reduced pressure by using a centrifuge evaporator.
The collected methanolic extracts were concentrated to 50 mL at reduced pressure by using a rotary evaporator.
Matsumoto and Konuma were successful in producing cubic TaN by heating hexagonal TaN at a reduced pressure using a plasma jet [8].
The mixture was placed in a round-bottom flask, and a gel was formed by evaporating the organic solvent under reduced pressure using a rotary evaporator.
The extract was dried by evaporation using rotary vaporizers under reduced pressure at a temperature of 40-45°C 40-45°C
Extracts were obtained by removing the organic solvent under reduced pressures by using rotary evaporator.
EtOAc extract was obtained by evaporation under reduced pressure and then subjected to purification by silica gel column using CHCl3-MeOH solvent system with increased polarity (0 : 100–60 : 40) to yield eight fractions.
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