We used the highly doped n + -type silicon wafers as it allows fabrication of the mesoporous silicon (meso-PS) composed of ordered vertical pores.
Both pore formation and polishing (marked by the vertical etching of the nanopillars) are observed in highly doped and lightly doped Si during metal-assisted chemical etching.
Highly doped SiNWs of the same lengths were also fabricated using etchants composed of different χ and [H2O] values, thereby showing that porosity can be effectively tuned by etchant composition despite varying etching durations.
Local highly doped regions are prepared by point wise laser irradiation of a silicon surface which was previously coated by a phosphorous containing passivation layer [4].
A highly doped thin poly-Si layer of thickness 163 nm was fabricated on a quartz substrate by aluminum-induced crystallization (AIC).
Eddie Jones says England will look to copy Muhammad Ali by using "rope-a-dope" tactics to outwit South Africa at Twickenham on Saturday.
Diamond/CeF3 composite film (DCCF) electroluminescence devices was fabricated on highly doping n-type silicon substrates by using plasma chemical vapor deposition techniques and vacuum electron beam evaporation techniques.
For the considered UTC-PD, by using the optimized linear doping profile and the Gaussian doping profile, the improvement in saturation current is 18.7% and 25.8%, respectively.
A highly performing ECL glucose biosensor was developed by immobilizing glucose oxidase (GOD) onto a membrane modified glassy carbon electrode, which was prepared by using poly(diallyldimethylammonium chloride) (PDDA) doped with chitosan.
Three-dimensional (3D) N, S co-doped graphene hydrogels (NSGHs) were facilely prepared by using thiocarbohydrazide as reducing and doping agents in an aqueous solution.
