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After cleaning, Ni was evaporated by using an e-beam evaporator at 1Å/s.
The source and drain electrodes were patterned by photo-lithography and Ti/Au (5/80 nm) were deposited on the patterned by using an e-beam evaporator.
The interdigitated (IDT) platinum electrode, consisting of a common electrode and three individual electrodes that are interdigitated, was deposited on an alumina substrate by using an e-beam evaporator.
Next, for metallization, the Ti/Au (10 nm/200 nm) layers were deposited by using an e-beam evaporator KVE-E20044, Korea Vacuum Tech., LTD), and then the lift-off process was followed.
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A 200-500-nm-thick Au printable layer was fabricated on a Si transfer substrate using standard photolithography, followed by metals deposition using an e-beam deposition system and lift-off.
The microcantilevers were cleaned by rinsing with acetone, ethanol, and treating them with UV ozone and then coated with 10 nm of chromium (adhesion layer) followed by 200 nm of gold using an e-beam evaporator at the deposition rate of 0.2 Å/s.
ZnO and Ag films were deposited using an e-beam evaporator and an IAD system.
Then, 15- to 20-nm-thick Ta2O5 films were deposited using an e-beam evaporator.
200 nm of gold was evaporated on the wafer using an e-beam evaporator (CHA, SEC600).
Following the clean, 10 nm Cr and 200 nm Au layers was deposited using an e-beam evaporator.
E-beam provides a very precise and controlled means to pattern surfaces in the nanometer range; however, patterning using an E-beam entails serially creating one spot at a time.
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