Sentence examples for by using a semiconductor from inspiring English sources

All the static (or DC) characteristic measurements of the printed devices were conducted by using a semiconductor parameter analyser (Keithley, 4200-SCS).

This scheme improves the sensitivity of the receiver in a microwave transport system by using a semiconductor laser to amplify the RF signal.

A diode-pumped passively mode-locked Nd YVO4 laser with a five-mirror folded cavity is presented by using a semiconductor saturable absorber mirror (SESAM).

In this paper a simple all-optical logic device, called Mach Zhender Interferometer is composed by using a semiconductor optical amplifier (SOA) and an optical coupler.

This chapter summarizes crystal growth, final finish machining, precision cleaning, and defect inspection of a substrate by using a semiconductor silicon single crystal destined for an LSI as an example.

The sheet resistance of graphene was measured by using a semiconductor parametric analyzer (Keithley 4200-SCS).

For this, Metal-Oxide-Semiconductor (MOS) capacitors were fabricated on a 300-mm silicon wafer by using a conventional semiconductor device production process.

The capacitance density versus voltage (C-V) and current density versus voltage (I-V) characteristics were measured at room temperature by using a Keithley 4200 semiconductor analyzer.

To investigate the effect of the NPs at the Ni/SiC interface on the electrical properties, current-voltage [I-V] and capacitance-voltage [C-V] characteristics of the devices were measured by using a Keithley 4200 semiconductor parameter analyzer (Keithley Instruments Inc., Cleveland, OH, USA).

The electrical characteristics of the DPA TFTs were measured at room temperature in air and in the vacuum by using a Keithley 4200 SCS semiconductor parameter analyzer and a Micromanipulator 6150 probe station.

Rather consistent power conversion efficiencies have been achieved in organic solar cells throughout a wide range of active layer thicknesses (∼100 nm to ∼800 nm) by using a p-type polymer semiconductor with high hole transport mobility (∼1 cm2 V−1 s−1) as the donor, and PC61BM as the acceptor.