Sentence examples for by the structure engineering from inspiring English sources

The properties of energy storage devices can be improved by the structure engineering of electrode materials, device design of cells, and performance optimization of systems.

Two approaches are proposed in order to improve the retention time: by the source/drain structure engineering or by applying a pulsed back gate bias.

The advances have been dramatic in the case of infrared lasers, where improved performance is linked with the suppression of nonradiative Auger recombination by band structure engineering associated with the introduction of thin InAs layers into the devices and associated type II band alignments at the interfaces.

Similarly, by the electronic-structure engineering of HMAs, thermoelectric properties such as, the Seebeck coefficients over Fermi-level were found to be improved from 82.90 μV/K to 107.52 μV/K for AlBi1-xSbx and 60.32 μV/K to 92.73 μV/K for InBi1-xSbx.

Therefore, artificial graphene-like structures have properties similar to those of real graphene, and are tailorable by appropriate structure engineering.

Relative high filling ratio and poor reflection loss performance in low frequency are two major challenges in promoting microwave response of current carbon material which could be overcome by rational structure engineering.

Sustainable high Tc (>117 K) in over-doped Cu-1234 were achieved by the selective over-doping effect, and high Tc's of 126 K in Cu1−xTlx-1234 and 132 K in Cu1−xTlx-1223 were achieved by homogeneous optimum-doping effect by band structure engineering.

Toward the basic requirement of replacing traditional rigid silicon electronics by new materials, structure engineering, such as structures in "wavy" layouts and the open mesh geometry have also been investigated to achieve stretchability [4 6].

However, the simultaneous enhancement of electrical conductivity and Seebeck coefficient can be realized in practice by electronic band structure engineering.

The theoretical results are illustrated by simulated examples from the field of structure engineering.

This opens the possibility of exploiting the versatility on band structure engineering offered by this QD-CL structure in devices working at RT. 81.15.Hi (molecular beam epitaxy); 78.55.Cr (III-V semiconductors); 73.21.La (quantum dots).