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The first one is governed by the hole diffusion to the electrolyte/SiC interface.
This value is in good agreement with previous studies performed in non-intentionally doped (100 -grown GaAs QWs which demonstrate that the concentration grating experiments are governed by the hole diffusion [9].
Similar(58)
The electron diffusion length is longer than the hole diffusion length, as commonly observed in semiconductors with a lighter effective mass of electrons than of holes15, and as was previously found for MAPbI316.
The hole diffusion in 3D SiGe/Si nanoislands with a high Ge content is controlled by large (> 100 meV) valence band barriers [22].
where D h stands for the hole-diffusion coefficient, which depends on the hole drift velocity and material temperature.
where ( {L}_C=sqrt{D_h{tau}_h} ) is the hole-diffusion length in the core.
The PEC performance of hematite (α-Fe2O3) is largely limited by its short hole diffusion length, which imposes restrictions on increasing the thickness for enough light absorption.
The short hole diffusion length (∼2 4 nm) [9] allows only holes created close to the electrolyte interface to oxidize water.
The difference in hole diffusion length is explained by the existence of recombination centers produced by the transporting agent in the crystal bulk.
The minority carrier (hole) diffusion length was estimated to be ∼50 nm by the analysis of the CL dark spots.
The mechanism of generation of high open-circuit photovoltages (Vocs) of 0.62 0.63 V for n-Si (~ 1 Ω cm) electrodes modified with colloidal Pt particles (4 nm in diameter) is investigated by measurements of minority-carrier (hole) diffusion length (Lp) and temperature dependence of Voc.
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