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The RSM confirms the two inter layers and the epi-layer peaks by the diffraction profile of the InGaN film.
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The crystallinity index was calculated using the amorphous subtraction method, which determines crystallinity by subtracting the amorphous contribution from the diffraction profile obtained from xylan (Aldrich) measured in parallel.
At the temperature of 450°C, the diffraction profile can be indexed by the reflections of SnO phase and Sn2O3 phase.
In the case of an imperfect crystal, the diffraction profile is more complicated (Fig. 2 ▸).
Annealing in oxygen above 873 K reduces the width of the diffraction profile.
Thus, it appears that the sample rather than the beam defines the resolution of the diffraction profile.
The diffraction profile was acquired from 5 to 50˚ in 0.0167 steps, with 66 s per step.
The simulations of the KTP 004 and KTA 002 profiles were the least successful and suggest that the OG model is omitting factors which influence the diffraction profile.
We emphasize the following points: (i) As suggested by the BF imaging results, the structure-factor modulation between adjacent domains contributes to the diffraction profiles.
The diffraction profiles are shifted vertically for clarity.
The most noticeable feature in most of the diffraction profiles is the occurrence of satellite (or superlattice) peaks, with angular spacings given by which is equivalent to 1/Λ in.
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