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Subsequently, PVA phase in the scaffolds was extracted by solvent etching method to create open pores, which are hard to create in gas foaming.
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Thus, a solvent etching method was developed that imparted a 5-fold increase in roughness to the surface of the struts of poly(ε-caprolactone) (PCL) FFF scaffolds.
Upon UV irradiation, the adjacent interfaces of the multilayer reacted to form a covalently crosslinking structure which greatly improved the stability of the films as confirmed by solvent etching experiments.
In this paper, solvent growth of β-HMX is described, as are dislocation studies by the etching method.
The parylene-C beam structures are fabricated by simple RIE etching method, and the silicon proof-mass is made by isotropic wet etching technique.
However, by controlling the etching duration/rate, it is possible to fabricate the as-designed free-standing cantilever structures by anisotropic wet etching method.
Silver QCs were prepared by the interfacial etching method as per our earlier article [34].
Figure 2 shows the PL spectra of porous silicon elaborated on silicon powder by acid vapor etching method during different etching times.
Silicon nanowires array was grown by an aqueous electroless etching method by depositing noble metal nanoparticles like silver and copper.
First, the n-type porous InP template was prepared by a two-step etching method [40].
SiNW arrays used in this study were prepared by a Ag-assisted etching method.
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