Tandem CIGS layers were fabricated by using three precursor of CuIn, In/CuGa/In, and CuGa onto the Mo coated soda-lime glass (SLG) by the sequential sputtering of CuIn, CuGa, and In targets.
The multilayer coatings were prepared by sequential sputtering using a nitrogen gas flow controller and a shutter by the sputtering of the CrB target.
ZrN/SiNx films were deposited by sequential sputtering from elemental Zr and Si3N4 targets at substrate temperature of 300 °C, with ZrN and SiNx layer thickness varying from 2 to 10 nm.
By considering ferromagnetic SiO2/Co/CoO granular multilayers produced by sequential sputtering deposition, we verify that the Co grains present strong interfacial exchange coupling with the CoO matrix, assigned by the exchange bias effect as well as the raise of the Co blocking temperature.
Zr-Si-N films were deposited by co-sputtering from Zr and Si targets at substrate temperature Tdep of 600 °C, with Si content ranging from 0 to 22.1 at.%, while ZrN/SiNx multilayers with ZrN (resp. SiNx) layer thickness varying from 2 to 40 nm (resp. 0.4 to 20 nm) were synthesized by sequential sputtering from elemental Zr and Si3N4 targets at Tdep = 300 °C.
Depth profiles were recorded by sequential sputtering with 2 keV Cs+ ions (500 × 500 μm area, ∼170 nA sputter beam current).
The films were grown by sequential sputter deposition of individual oxide layers from metal targets using radio-frequency-excited, O2-bearing discharges.
High quality kesterite (Cu2ZnSnSe4) absorbers with good crystallinity were produced on these substrates by sequential precursor sputtering and selenization.
The cells were fixed in Karnovsky's fixative overnight, dehydrated by sequential alcohols, sputter coated with gold – palladium and images taken at 10000× magnification.
Titrations were performed by sequential addition of ligand to enzyme.
