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Nano-composites of iron-based alloys in α-Al2O3 matrices were formed by sequential implantation of Fe and Co ions.
There are known some first examples for hollow nanoparticles in glass that were prepared by sequential implantation of two different metal ions [6 8].
With the purpose to create micropatterned surfaces, the substrates are modified by sequential implantation of Ca and P ions, known as basic ions of HA, through a mask with a definite design.
The purpose of this study is to clarify the dependence of He ion energy on Si blistering characteristics by sequential implantation of H and He ions into Si in various sequences.
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In addition, the variation of hydrogenated complexes induced by sequential implantation and annealing can be evidently identified from the Raman spectra, showing a noticeable transformation of H-related defect complexes from VH3 to Si(100):H bonding configuration due to the emergence of blisters and craters.
Conversely, the sequential implantation of Cr+ and N2+ at 140 keV and fluencies of 3 × 1017 and 1.5 × 1017 ions/cm2 respectively, permits the formation of a functional surface capable of reducing both the corrosion rate and the wear rates, with respect to those exhibited by the un-implanted Ni surfaces.
As compared to the conventional smart-cut technology based on single H ion implantation, sequential implantation of H and He ions has been demonstrated to be effective in reducing the implantation fluence and the thermal budget needed for Si layer splitting process.
Vibrational and electronic characterizations have been performed on the P only and In only samples to obtain an understanding of the thermal annealing behavior in order to obtain a meaningful guide for the fabrication of InP quantum dots (QDs) formed by sequential ion implantation of In and P in SiO2.
However, the sequential implantation method involves complicated process parameters such as ion energy and implantation sequence.
Six human cadaver knees were tested both before implantation and after sequential implantation with two posterior cruciate retaining designs.
A sequential ion implantation of C+ ions with the energies 25, 50, and 90 keV and with doses in proportion of 2: 3: 6, respectively, was performed.
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