Sentence examples for by rapid thermal processing from inspiring English sources

A SiO2 layer, which was deposited on bulk silicon substrate using plasma-enhanced chemical vapor deposition (PECVD) followed by a 50-nm-thick α-Si thermally grown by rapid thermal processing (RTP).

The thin films were deposited at 500 °C and annealed at various temperatures (550 ~ 750 °C) by rapid thermal processing.

The growth technique using MBE deposition of 0.7-1 nm thick Ge layer followed by rapid thermal processing was implemented in [8, 9].

Then, samples were performed by rapid thermal processing at 600°C for 2 min and ZnO seed layer was formed on the substrate.

The post annealing was performed by rapid thermal processing at different temperatures (300°C, 400°C, 500°C, 700°C) for 3 min in nitrogen.

We report on controlled band gap modification in a compressively strained InGaAsP multi-quantum well-laser structure using different encapsulating layers followed by rapid thermal processing (RTP).

Figure 1 shows the Ag spherical nanoparticles on silicon surface produced by rapid thermal processing-induced stress.

In this paper, dense and crack-free yttrium-doped barium zirconate (BZY) thin films were fabricated by chemical solution deposition (CSD) with rapid thermal processing (RTP) at low sintering temperature.

First, SiO2 film was deposited over the bulk silicon substrate using plasma-enhanced chemical vapor deposition (PECVD) followed by α-Si material thermally grown over the SiO2 layer using a rapid thermal processing (RTP) tool.

In this work, buried nanocrystals of the direct band gap II VI compound semiconductor CdSe were synthesized by sequential high dose ion beam implantation into thin thermally grown silicon dioxide layers and subsequent rapid thermal processing.

We demonstrate the synthesis of single-layer graphene films on copper by photo-thermal chemical vapor deposition (PTCVD) realized using a rapid thermal processing system typically used in CMOS processing.