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After the Al2O3 deposition, some of the samples were annealed by rapid thermal process (RTP) in nitrogen at 750 or at 950°C.
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Recently, interest has been growing in selenization by Rapid Thermal Processing (RTP), which is characterized by rapid temperature ramping, approximately 550 °C or higher temperature reactions, and improved process throughput.
Figure 1 shows the Ag spherical nanoparticles on silicon surface produced by rapid thermal processing-induced stress.
The samples were then annealed at 700 °C for 20 min in air by a rapid thermal process (RTP) to experience a crystallization process.
After deposition, the as-deposited films were annealed by a rapid thermal process (RTP; AS-ONE, Montpellier, France) system at the temperatures of 400 900 °C with an increment of 100 °C in N2 atmosphere.
Therefore, in this work, we selected and synthesized heteroepitaxially multiferroic composite thin films of BNF-NZF (2-2-type structure) with different growth sequences on the Pt(111)/Ti/substrates0) subythetes by the sol-gel and rapid thermal process.
The purified Si microparticles (Si-MP) are recycled by a simple and fast procedure, Rapid Thermal Process (RTP).
The performance of the devices with the sol-gel ITO atop the ITO anodes treated by conventional annealing at 500 °C for 1 h and rapid thermal process (RTP) at 800 °C for 20 and 30 s was compared.
They were annealed at temperatures from 800 to 1100 °C under Ar atmosphere using rapid thermal process (RTP).
Rapid thermal process.
A rapid thermal process system (RTP; AS-ONE, Montpellier, France) was used.
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