Photodeposition of Ag2S was conducted by two steps: photoreduction of Ag+ to Ag by TiO2 NRA followed by the sulfurization of Ag to Ag2S QDs.
Thin films of different Pd S phase, namely Pd4S, PdS and PdS2, have been reproducibly grown by the sulfurization of Pd films deposited on native oxide of (111) Si substrates by radio frequency sputtering method.
In this study, Cu2ZnSnS4 (CZTS) thin films were prepared on Mo-coated soda-lime glass substrates by sulfurization of precursors deposited by single-source evaporating the metallic mixture of Cu Zn Sn.
Additionally, pure-phase CoS2 film has been synthesized by sulfurization of Co film: The substrate on which Co is deposited by an e-beam evaporator is located in the tube furnace and sulfur powder is vaporized by flowing Ar gas at 550 °C [3].
Attempts to synthesis MoS2 layers by the simple sulfurization of Mo metal thin films have been reported.
Several different compounds including BaZrS3, CaZrS3, SrTiS3 and SrZrS3 were synthesized by high temperature sulfurization of their oxide counterparts.
ZnO nanorod arrays were used as a template for the fabrication of ZnO/ZnS nanocables by sulfurization of ZnO after a thioglycolic acid-assisted reaction.
Alternatively, attempts have also been made to prepare wafer-scale semiconducting MoS2 thin layers [63] by the direct sulfurization of an MoO3 thin layer (Figures 5a-c).
A low-temperature electron spin resonance study has been carried out on large-area high-purity polycrystalline two-dimensional few monolayer (ML) 2H MoS2 films synthesized by sulfurization of Mo layers, with intent to atomically assess mobility-degrading detrimental point defects.
b Raman spectra: (A) Mo6S2I8 nanowires, (B) Mo6S4I6 nanowires; arrows point traces of MoS2; square dot (see also the inset) shows a position of the characteristic peak at 117 cm-1, (C) MoS2 nanotubes gained by sulfurization of Mo6S4I6 nanowires.
