The present work suggests a useful strategy to improve the device performance by optimizing the window layer besides the absorber layer.
By optimizing the active layer morphology, there is still room for improving the PSC performance and in particular for the fill factor.
By optimizing the absorption layer thickness, the current match between the top and the bottom component cells is achieved using very thin films as thin as 1500 nm.
By optimizing the CrN/AlN layer thickness ratios to 2/1, 3.5/2, and 3/3 nm highest as-deposited hardnesses of ~ 31 GPa can be obtained.
By optimizing the p-layer deposition and with the use of post-deposition annealing of the entire cell structure, an efficiency of 8.7% was achieved for a 1.55 eV band gap protocrystalline SiGe:H n i p cell on an Asahi U-type substrate coated with a Ag/ZnO back reflector.
The electroluminescence properties of the non-doped devices were enhanced with the double hole-transporting layers by optimizing the energy level matching.
Thus, by optimizing the nanocrystalline silicon layer thickness and the hydrogen dilution, one can tune the band gap and structural order of multilayer films.
Utilizing shock compression physics considerations and explicit numerical techniques a methodology has been developed to design composite personnel armor by optimizing the role each layer plays during projectile defeat.
Furthermore, a hybrid computation based on combined numerical- metaheuristic modeling approach is proposed to boost the solar cell performance by optimizing the intermediate metallic layers.
By optimizing the thickness of the individual layers and the doping levels within those layers, an effective conductivity of 20 600 S/cm and an average transmittance larger than 85% in the 400 700 nm range have been achieved for films epitaxially grown on MgO substrates.
