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Relationship between the rate of electrochemical formation of mesoporous Si and the crystallographic directions has been studied by local anodization of wafers through a mask having the form of narrow long wedges radiating from the center in all directions ('wagon-wheel' mask).
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Sample A is patterned by optical lithography and wet etching in HCl with a width of ~15 μm, sample B is patterned by AFM local anodization with a width of ~5 μm, and sample C is patterned by FIB milling with a width of ~0.5 μm.
To form the mask for local anodization, we formed n-Si layers either by local diffusion of phosphorus at 1,100 °C (p-n junction depth x j = 3 μm) or by ion implantation (dose 5 × 1015 cm−2) with subsequent annealing (x j ≈ 1.4 μm).
For most of the above-mentioned applications, the mask must be removed after local anodization.
This paper reports on a simple method for wafer-scale production of precisely-shaped 2D patterns of porous anodic alumina (PAA) by masked anodization of aluminum films.
Highly ordered nanoporous anodic aluminium oxide (AAO) fabricated by electrochemical anodization of aluminium foil was used as the RIfS sensing platform.
Titanium dioxide nanotubes, TiO2 NTs, can be obtained by electrochemical anodization of Titanium sheets.
TiO2 nanotubes were prepared by electrochemical anodization of titanium sheets.
TiO2 nanotubes were prepared by electrochemical anodization of titanium foil using ethylene glycol: NH4F electrolyte (2% water and 0.3% NH4F).
This can be realized by partial anodization of the aluminum film.
The TiO2 nanotube arrays (TNTs) were prepared by electrochemical anodization of the Ti foils.
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