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Its yield was further optimized by elevating the temperature to 140 °C, and increasing catalyst loading (20 mol%) also enhanced the yield of linear product.
It was found that high arc power promoted splat-substrate adhesion by elevating the temperature and velocity of the impinging particles compared to low arc power.
Constant-current electrolysis shows that the current efficiency was 73% for the oxidation process of Ce(III) and 78% for the reduction process at 298 K, and could be improved by elevating the temperature.
By elevating the temperature to 37 °C, the cell-laden microspheres were completely dissolved within 2 days, resulting in the same number of same-sized spherical cavities in hydrogel bulk, along with which the encapsulated cells were released from the microspheres and suspended inside the cavities to be cultivated for further development.
The transformation from the PAMPS-core micelle to the PNIPAM-core micelle was induced by removing Fe3+ ion using ethylenediaminetetraacetic acid followed by elevating the temperature above the LCST of the PNIPAM block, while the reverse transformation was triggered by adding Fe3+ ion at a lower temperature.
Similarly, for the analysis of alveolar air, benzene is enriched on a solid phase material and transferred to a capillary column by elevating the temperature of the sorbent.
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After amplification with primers that will not differentiate between methylated and unmethylated molecules, the melting properties of the PCR products can be examined in the thermal cycler by slowly elevating the temperature under continuous or step-wise fluorescence acquisition.
Furthermore, during the digestion period, the Exo III activity could be significantly increased by elevating the electrode temperature, great improving the sensitivity and efficiency for Hg2+ detection.
In the next step, DCM was evaporated by elevating the emulsion temperature to 70 °C while the emulsion was continuously stirred at 200 rpm for 1 h.
The average height of the Si nanostructures increased from 308 ± 22 to 668 ± 94 nm by elevating the etching temperature from 23°C to 40°C.
In homo-brushes as well as polymer mixed-brushes, by elevating the crystallization temperature, the total height and substrate thickness of single crystals in different phases were raised.
More suggestions(15)
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by controlling the temperature
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