Exact(8)
By electrical processing, the processed surface protuberates and the current decreases by the formation of the oxide layer because of anodization by applying a positive voltage to the silicon.
Decreasing rate in the current of processed surface that was anodized by electrical processing saturated at a certain applied voltage.
In contrast, the heights of protuberances formed by electrical processing with vibration were higher than those of areas mechanically processed with vibration.
For sequential processing, the resistivity increases by electrical processing because of anodic oxidation.
With sequential processing, the local oxide layer formed by electrical processing can be removed by mechanical processing using the same tip without vibration.
It is clear that protuberances formed by electrical processing can be removed by mechanical processing and then reformed by subsequent additional electrical processing.
Similar(52)
The protuberance composed of the oxidation layer processed by the electrical processing can be removed by an appropriate mechanical processing without vibration.
The electric resistance of the mechanically processed area can then be increased because of oxidization by additional electrical processing.
A 0.54-nm-high protuberance of the anodic oxide layer was formed by the electrical processing.
This means that the oxide layer formed by the electrical processing remained even after mechanical processing at 2,000 nN load.
The cross-sectional surface profiles show that the surface of the silicon was oxidized and raised to a height of nearly 0.75 nm by the electrical processing.
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