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Moreover, since metal-assisted etching is accomplished at room temperature, metal is not incorporated inside the NWs, but it remains trapped at the bottom of the etched regions and can be easily removed by an appropriate etching solution.
The 3D pattern of resist structures is subsequently transferred into SiO2 by an appropriate etching.
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Firstly, the removal of surface oxide enables the selective etching, and the hillock height can be controlled by choosing appropriate etching time and temperature as shown in Fig. 2.
The 3D pattern of resist structures is subsequently transferred into SiO2 by appropriate etching.
The design of an appropriate chemical etching system is needed in order to realize successful microfabrication.
Then, by choosing an appropriate method (dissolution, sintering, etching, etc)., the target product can be obtained.
In this process, the detachment of the porous alumina membrane and through-holing could be achieved simultaneously by etching in an appropriate acid solution.
Begin by choosing an appropriate text.
Grit blasting is always followed by an acid etching to remove the residual blasting particles.
As a result, the hillocks can be selectively erased in KOH solution after etching for an appropriate period.
Note that partial etching of a copper (Cu) or nickel substrate can occur by the electrolyte during the ECD process, and this can be suppressed by the choice of an appropriate electrolyte such as Na2SO4 [47].
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